By Topic

Effect of film thickness on the electrical properties of tantalum nitride thin films deposited on SiO2/Si substrates for Π-type attenuator applications

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Cuong, Nguyen Duy ; Department of Materials Science and Engineering, Chungnam National University, Daeduk Science Town, 305-764, Daejeon, Korea ; Kim, Dong-Jin ; Kang, Byoung-Don ; Kim, Chang‐Soo
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link: 

Ta2N films were deposited on SiO2/Si substrates using reactive dc magnetron sputtering, and were then annealed in a vacuum ambient. The structural and electrical properties of Ta2N films and their dependence on the film thickness (50–200 nm) were characterized with respect to their application as Π-type attenuators. The root mean square roughness and temperature coefficient of resistance (TCR) increased with increasing film thickness. The near zero TCR value of the films is possible by controlling the annealing temperature or film thickness. The sheet resistance and TCR of 50 nm thick Ta2N films are approximately 80 Ω/◻ and -24 ppm/K, respectively, and are suitable for 10 dB applications in Π-type attenuators.

Published in:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:24 ,  Issue: 3 )