Ta2N films were deposited on SiO2/Si substrates using reactive dc magnetron sputtering, and were then annealed in a vacuum ambient. The structural and electrical properties of Ta2N films and their dependence on the film thickness (50–200 nm) were characterized with respect to their application as Π-type attenuators. The root mean square roughness and temperature coefficient of resistance (TCR) increased with increasing film thickness. The near zero TCR value of the films is possible by controlling the annealing temperature or film thickness. The sheet resistance and TCR of 50 nm thick Ta2N films are approximately 80 Ω/◻ and -24 ppm/K, respectively, and are suitable for 10 dB applications in Π-type attenuators.