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Two-dimensional carrier profiling on operating Si metal-oxide semiconductor field-effect transistor by scanning capacitance microscopy

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5 Author(s)
Kimura, Kenjiro ; Department of Electronic Science and Engineering, Kyoto University, Katsura, Nishikyo, Kyoto 615-8510, Japan ; Kobayashi, Kei ; Yamada, Hirofumi ; Matsushige, Kazumi
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We developed scanning probe microscopy procedures for simultaneous measurements of device characteristics and two-dimensional (2D) carrier distribution on operating cross-sectioned semiconductor devices in order to investigate their operating or failure mechanisms. Usually one cannot operate semiconductor device in a chip once the chip was cleaved and polished to expose its cross-sectioned surface because of lost electrical connections to the device. Here we employed a focused ion beam (FIB) apparatus for etching contact holes and fabricating additional electrical connections to the device by chemical vapor deposition (CVD) method. FIB-CVD is capable of fabricating three-dimensional wirings toward each electrode in a specific device. We prepared a cross-sectioned metal-oxide semiconductor field-effect-transistor sample with external tungsten wirings for device operation and performed scanning capacitance microscopy observations for dynamic 2D carrier distribution mapping on this sample.

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Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:24 ,  Issue: 3 )