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All-inverter complementary metal oxide semiconductor based dose control circuit for using vertically aligned carbon nanofibers in maskless lithography

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7 Author(s)
Islam, S.K. ; Department of Electrical and Computer Engineering, University of Tennessee, Knoxville, Tennessee 37996-2100 ; Durisety, C. ; Vijayaraghavan, R. ; Blalock, B.J.
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This article presents a prototype implementation of a circuit that can control charge emission from the vertically aligned carbon nanofibers (VACNFs), for use in the implementation of digital electrostatically focused e-beam array direct-write lithography. This lithography technique can be used to fabricate ultra-small feature size devices, while cutting down the manufacturing costs of photomasks [Baylor etal, J. Vac. Sci. Technol. B 20, 2646 (2002)]. These VACNFs are found to be quite robust for use as microfabricated field-emission devices [Bolton etal, Sens. Actuators B 85, 179 (2002)]. The all-inverter based dose control circuit presented in this article was fabricated using a standard 0.5 μm complementary metal oxide semiconductor process to improve the dose-rate accuracy, when using these VACNFs for etching in maskless lithography. Simulation and measurement results are compared and analyzed, and future work for improving the design is discussed.

Published in:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:24 ,  Issue: 2 )

Date of Publication:

Mar 2006

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