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Browse Journals & Magazines > Journal of Vacuum Science & T ...> Volume:24 Issue:2 Help

Fabrication of gated cold cathode using standing thin film induced by ion-beam bombardment

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3 Author(s)
Yoshida, T. ; Center for Microelectronic Systems, Kyushu Institute of Technology, 680-4 Kawazu, Iizuka, Fukuoka 820-8502, Japan ; Baba, Akiyoshi ; Asano, T.

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We demonstrated high current field electron emission from a gated field electron emitter fabricated by the thin film standing technique which was induced by ion-beam bombardment and etch-back technique. The thin film material was tungsten disilicide. An emitter tip having a high aspect ratio was fabricated inside a gate aperture of 2 μm in diameter. The emission current of 10 μA was obtained from a single tip cathode at the gate voltage of 133.5 V. A multitip cathode composed of 1000 tips cathode showed a lower turn-on voltage (31 V) than that of the single tip (112 V), which indicated nonuniform distribution of the turn-on voltage.

Published in:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:24 ,  Issue: 2 )

Date of Publication: Mar 2006

Page(s):
932 - 935
ISSN :
1071-1023
Digital Object Identifier :
10.1116/1.2180262
Product Type:
Journals & Magazines
Date of Current Version :
18 June 2009
Issue Date :
Mar 2006

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