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rf microelectromechanical system device with a lateral field-emission detector

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5 Author(s)
Yamashita, K. ; IIS, University of Tokyo, 4-6-1 Komaba, Meguro-Ku, Tokyo 153-8505, Japan ; Sun, W. ; Kakushima, K. ; Fujita, H.
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Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1116/1.2177231 

We propose a micromachined device that utilizes the field-emission (FE) phenomenon as a mean to modulate signal for radio-frequency microelectromechanical system applications. In this article, we present the stationary reference (SR) device and the resonator-embedded (RE) device and compare their field-emission performances. The SR device contains no moving part and is used to examine the conditions to excite field emission. The RE device has an embedded microresonator of bandpass filter characteristic. Due to enhanced tip sharpness and closer gap, initial results show that compared to the SR device, the FE current of the RE device has been increased by 192 times under the same anode-cathode potential difference of 240 V and 2×10-8 Torr vacuum level.

Published in:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:24 ,  Issue: 2 )

Date of Publication: Mar 2006

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