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Buffer controlled GaN nanorods growth on Si(111) substrates by plasma-assisted molecular beam epitaxy

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6 Author(s)
Hsiao, C.L. ; Department of Physics, National Sun Yat-Sen University, Kaohsiung 80424, Taiwan, Republic of China and Center for Nanoscience and Nanotechnology, National Sun Yat-Sen University, Kaohsiung 80424, Taiwan, Republic of China ; Tu, L.W. ; Chi, T.W. ; Seo, H.W.
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Size, shape, and density of self-assembled GaN nanorods grown on Si(111) substrates by plasma-assisted molecular beam epitaxy were successfully controlled by inserting a GaN buffer layer. The structure of the GaN buffer layer plays a vital role in the nanorod growth. Only a broken buffer layer with a suitable opening size can grow nanorods. Evolution of the nanorod is traced to the initial growth stage. Crystal seed grown at the wall of the opening in the buffer layer initiates the beginning of the nanorod, and a self-catalytic vapor-liquid-solid process, triggered by the nanocapillary condensation effect, enhances the GaN nanorod growth. Furthermore, the nanorod density can be largely controlled by using the beam equivalent pressure of the N/Ga ratio. Other GaN nanostructures grown at different growth conditions are also discussed in details.

Published in:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:24 ,  Issue: 2 )