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Hot-wire chemical-vapor-deposited nanometer range a-SiC:H diffusion barrier films for ultralarge-scale-integrated application

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4 Author(s)
Singh, S.K. ; Department of Metallurgical Engineering and Materials Science, Indian Institute of Technology, Bombay, Mumbai-400 076, India ; Kumbhar, A.A. ; Dusane, R.O. ; Bock, W.

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Hydrogenated amorphous silicon-carbon alloy thin films (a-SiC:H) deposited from C2H2 and SiH4 by the hot-wire chemical-vapor deposition (HWCVD) technique on low-k hydrogen silsesquioxane (HSQ) layers show effective barrier properties against Cu diffusion. These a-SiC:H films with different thicknesses were deposited on HSQ films and the leakage current in a metal-insulator-semiconductor device structure such as Cu/a-SiC:H/HSQ/Si/Al was determined. It was observed that HWCVD a-SiC:H acts as a very efficient diffusion barrier layer on HSQ with an effective dielectric constant of the combined stack much lower than that of SiO2. Secondary-ion-mass spectroscopy analysis indicates that an a-SiC:H film of less than 10 nm would provide the desired barrier effect.

Published in:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:24 ,  Issue: 2 )