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Characterization of ultralow-energy implants and towards the analysis of three-dimensional dopant distributions using three-dimensional atom-probe tomography

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4 Author(s)
Thompson, K. ; Imago Scientific Instruments, 6300 Enterprise Lane Suite 100 Madison, Wisconsin 53719 ; Bunton, J.H. ; Kelly, T.F. ; Larson, D.J.

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1116/1.2141621 

The addition of a local electrode geometry has transformed the conventional atom probe into a high-speed, high sensitivity tool capable of mapping three-dimensional (3D) dopant atom distributions in nanoscale volumes of Si. Fields of view exceeding 100 nm in diameter and collection rates exceeding 18×106 at./h are possible with the local electrode geometry. The 3D evolution of dopants, specifically dopant clustering, grain-boundary segregation, shallow-doped B layers, Ni–Si layers, and preamorphization regions, was analyzed. A 200 eV 11B implant in Ge-amorphized Si was mapped. The native surface oxide, 8-nm-deep B-doped layer, and Ge distribution were simultaneously mapped in 3D space. A subsequent Ni silicide process was analyzed to show Ni penetration through the doped layer. In a heavily doped poly-Si sample, a cluster of dimensions 2×7×8 nm3 and containing 264 B atoms was identified at the intersection of three grains. This shows that annealing highly overdoped thin poly-Si layers does not facilitate uniformly doped and highly conductive gate contact layers for nanoscale complementary metal-oxide semiconductor transistors.

Published in:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:24 ,  Issue: 1 )

Date of Publication:

Jan 2006

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