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Structural and electrical characterizations of ultrathin HfO2 gate dielectrics treated by nitrogen-plasma atmosphere

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3 Author(s)
Seong, Nak-Jin ; Department of Materials Engineering, Chungnam National University, Daeduk Science Town, 305-764 Daejeon, Korea ; Lee, Won-Jae ; Yoon, Soon-Gil

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1116/1.2151218 

Ultrathin HfO2 gate dielectrics with 3.00 and 2.60 nm thicknesses were prepared at 300 °C by plasma-enhanced metal-organic chemical-vapor deposition. These HfO2 films were treated by N2 plasma at 300 °C, and exhibit not only an excellent smooth surface morphology but also higher crystallization temperature and improved electrical properties. The N2-plasma treatment did not influence the interface charge density of the films. The 2.6 nm HfO2 treated by N2 plasma showed a leakage current density of 3×10-3 A/cm2 at -1.5 V, equivalent oxide thickness of 1.24 nm, and flatband voltage of 2 mV. We find that N2-plasma treatment in Hf-based ultrathin gate dielectrics can improve the electrical properties, as well as thermal stability.

Published in:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:24 ,  Issue: 1 )

Date of Publication:

Jan 2006

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