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Nanoscale layer etching by short-time exposure of substrates to gas discharges using moving patterned shutter

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4 Author(s)
Oehrlein, G.S. ; Department of Materials Science and Engineering, University of Maryland, College Park, Maryland 20742 and Institute for Research in Electronics and Applied Physics, University of Maryland, College Park, Maryland 20742 ; Hua, X. ; Stolz, C. ; Jiang, P.

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We use a moving shutter containing slits in close contact with a substrate to control the interaction time of gas discharges with the substrate for nanoscale layer/nanostructure processing. Both shutter and substrate are located on the rf-powered electrode and can be biased relative to the plasma. Once the plasma properties and electrode bias voltage are fully established, the shutter with slits begins to move at a controlled speed across the substrate to expose the substrate for the desired interaction time to the plasma. We show that for a fluorocarbon-based plasma etching process, steady-state etching conditions can be achieved within less than 2 s. This approach enables precise removal or deposition of nanoscale layers employing gas discharges.

Published in:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:24 ,  Issue: 1 )