Pulse oscillation of self-organized In_0.53Ga_0.47As quantum wire lasers grown on (775)B InP substrates by molecular beam epitaxy

A self-organized In_0.53Ga_0.47As/(In_0.53Ga_0.47As)₂(In_0.52Al_0.48As)₂ quantum wire (QWR) laser was grown on a (775)B InP substrate by molecular beam epitaxy. Threefold 3.6-nm-thick In_0.53Ga_0.47As QWR layers were used as an active layer, where lateral confinement potential was induced by a nanometer scale interface corrugation of InGaAs/(InGaAs)₂(InAlAs)₂ with an amplitude of 7 nm and a period of 65 nm. Photoluminescence was strongly polarized along the wire direction [P≡(I_||-I_⊥)/(I_||+I_⊥)=0.43–0.54] in the temperature range from 12 to 150 K, indicating their good one dimensionality. A 10 μm×500 μm stripe-contact QWR laser with uncoated cleaved mirrors oscillated with a threshold current density of 5.2 kA/cm² and a lasing wavelength of 1215 nm at 150 K under pulsed current condition.