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Pattern-dependent microloading and step coverage of silicon nitride thin films deposited in a single-wafer thermal chemical vapor deposition chamber

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3 Author(s)
Smith, Jacob W. ; Applied Materials Incorporated, 974 East Arques Avenue, Sunnyvale, California 94086 ; Seutter, S.M. ; Iyer, R.Suryanaryanan

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1116/1.2102947 

Less than 10% pattern-dependent microloading and greater than 95% step coverage are required for low temperature deposition of Si3N4 spacer and etch stop films in advanced logic and dynamic random access memory semiconductor applications. A single-wafer chemical vapor deposition chamber was utilized to analyze pattern loading effect on 130 nm and 90 nm patterned wafers. With silane-ammonia chemistry as the focus, a variety of processing methods were employed utilizing continuous and cyclical deposition modes. In addition, methods to modify diffusion and/or reaction rates were studied, such as remote plasma excitation and carrier gas modifications. Finally, chemistry-related variables were evaluated by changing the Si-source precursor. It was concluded that process chemistry and specifically precursor is the most dominant factor determining pattern loading effect.

Published in:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:23 ,  Issue: 6 )

Date of Publication:

Nov 2005

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