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Selective growth of vertical ZnO nanowires on ZnO:Ga/Si3N4/SiO2/Si templates

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7 Author(s)
Cheng-Liang Hsu ; Departments of Electrical Engineering and Electronic Engineering, MingChi University of Technology, Taishan, Taipei, 24301, Taiwan, Republic of China ; Shoou-Jinn Chang ; Hui-Chuan Hung ; Yan-Ru Lin
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High density vertical single crystal ZnO nanowires were selectively grown on ZnO:Ga/Si3N4/SiO2/Si templates at various temperatures by a two-step oxygen injection process of self-catalyzed vapor-liquid-solid (VLS) technology. It was found that tips of the ZnO nanowires are hexagonal. It was also found that average length of the ZnO nanowires increased while the average tip diameter of the ZnO nanowires decreased as the growth temperature increased. Furthermore, it was found that the ZnO nanowires grown at 500 °C were “tube-shaped” while the ZnO nanowires grown at 700 °C were “cone-shaped.” Photoluminescence (PL), x-ray diffraction (XRD), and energy depersive x-ray (EDX) results all indicate that the quality of our ZnO nanowires is good.

Published in:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:23 ,  Issue: 6 )