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Enhancement of electroluminescence in GaN-based light-emitting diodes using an efficient current blocking layer

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2 Author(s)
Jang, Ho Won ; Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), Pohang, Kyungbuk 790-784, Korea ; Lee, Jong-Lam

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Enhancement of electroluminescence in GaN-based light-emitting diodes (LEDs) was achieved using an efficient current blocking layer formed by postannealing. When a LED chip with Ni/Au pad on Ni/Au transparent p contact was annealed at 500 °C, the electroluminescence of the LED chip increased by 55%. The specific contact resistivity of metal contact below the p pad significantly increased due to indiffusion of Au and Ni atoms from the p pad to the contact interfacial region. As a result, an efficient current blocking layer could be formed below the p pad, enhancing the light output and decreasing the reverse leakage current of the LED chip. This result suggests that a further increase in the extraction efficiency of GaN-based LEDs can be easily obtained using the postannealing.

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Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:23 ,  Issue: 6 )