Cart (Loading....) | Create Account
Close category search window
 

Lateral tunneling injection and peripheral dynamic charging in nanometer-scale Schottky gates on AlGaN/GaN hetrosturucture transistors

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Kotani, J. ; Research Center for Integrated Quantum Electronics (RCIQE) and Graduate School of Information Science and Technology, Hokkaido University, Sapporo, 060-8628, Japan ; Kasai, Seiya ; Hashizume, Tamotsu ; Hasegawa, Hideki

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1116/1.1942507 

The gate leakage and gate control characteristics of AlGaN/GaN heterostructure field effect transistors (HFETs) were systematically investigated in an attempt to clarify possible effects of surface states. The experiments were compared to rigorous computer simulations. We observed large amounts of leakage currents in the Schottky diodes fabricated on the AlGaN epitaxial layers. By the calculation based on a thin surface barrier model in which the effects of surface defect donor were taken into account, this large leakage was well explained by enhancement of tunneling transport processes due to the barrier thinning associated with ionization of surface-defect donor. On the other hand, the analysis on the current-voltage characteristics for the nanometer-scale Schottky contacts on AlGaN/GaN HFETs, indicated additional lateral leakage components. The comparison of the gate control characteristics between experiment and calculation clearly showed that the effective lateral expansion of gate length significantly impeded the gm enhancement by the reduction of geometrical gate length. This can be explained by the lateral electron tunneling process at the AlGaN surface stimulated by the pronounced gate leakage currents. Due to frequent tunneling transfer at the gate periphery, surface state occupancy near the gate becomes governed by the metal Fermi level, causing the dynamic surface state charging effects. This resulted in effective widening of the gate length, leading to degradation of gate control performance in AlGaN/GaN HFETs.

Published in:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:23 ,  Issue: 4 )

Date of Publication:

Jul 2005

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.