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Selective wet etching of InGaAs/InGaAsP in HCl/HF/CrO3 solution: Application to vertical taper structures in integrated optoelectronic devices

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5 Author(s)
Hui Huang ; Beijing University of Posts and Telecommunications, P.O. Box 66, Beijing 100876, China ; Wang, Xingyan ; Xiaomin Ren ; Qi Wang
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Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1116/1.1990128 

The etching characteristics of In0.53Ga0.47As and In0.72Ga0.28As0.6P0.4, which are lattice matched to the InP substrate, in HCl/HF/CrO3 solution were studied by using the dynamic etch mask technique. For the solution with HCl/HF/CrO3 volume ratio of x: 0.5: 1, the etching selectivity decreases from 42.4 to 1.5 for In0.53Ga0.47As/In0.72Ga0.28As0.6P0.4 with HCl/CrO3 volume ratio x increasing from 0 to 1.0. The selective etching was experimentally applied to the fabrication of vertical taper structures with angles ranging from 1.35° to 33.7° on the In0.72Ga0.28As0.6P0.4 epitaxial layer, and surface roughness of the etched taper was ≪1.6 nm. The etching behavior can be explained in a combined electroless and chemical etching mechanism.

Published in:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:23 ,  Issue: 4 )

Date of Publication:

Jul 2005

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