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Using Ni masks in inductively coupled plasma etching of high density hole patterns in GaN

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8 Author(s)
Hsu, David S.Y. ; Naval Research Laboratory, Washington, DC 20375 ; Chul Soo Kim ; Eddy, C.R. ; Holm, Ronald T.
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Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1116/1.1978896 

High density patterns of holes in metalorganic chemical vapor deposition grown GaN films on sapphire have been fabricated by inductively coupled plasma etching using a nickel mask. Pattern transfer from the e-beam lithographically patterned resist to the nickel etch mask was accomplished by ion beam milling. A Cl2BCl3 inductively coupled plasma was used to anisotropically etch patterns of 200–250-nm-diam holes with 300 nm center-to-center spacing through the entire thickness of a 265-nm- and a 300-nm-thick GaN film. This work demonstrates a pattern transfer technique to Ni by ion beam milling and Ni as a durable etch mask under a chlorine environment for high density patterning of GaN films.

Published in:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:23 ,  Issue: 4 )

Date of Publication:

Jul 2005

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