Cart (Loading....) | Create Account
Close category search window

Optical characterization and evaluation of the conduction band offset for ZnCdSe/ZnMgSe quantum wells grown on InP(001) by molecular-beam epitaxy

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

6 Author(s)
Sohel, Mohammad ; Department of Chemistry of The City College of New York and Graduate Center of CUNY, New York, New York 10031 ; Zhou, Xuecong ; Lu, Hong ; Perez-Paz, M.Noemi
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link: 

Lattice matched ZnMgSe grown on InP is of considerable interest for its potential applications as a cladding layer due to the high band-gap energy (∼3.6 eV) and for use in intersubband devices such as quantum cascade lasers. Several lattice matched Zn0.5Cd0.5Se/Zn0.13Mg0.87Se quantum wells (QWs) were grown on InP (001) substrates. Emission ranging from the near UV to the visible spectral range was achieved by varying the thickness of the wells. The QW fundamental transition as function of the QW thickness was experimentally studied and modeled using an envelope calculation. The contactless electroreflectance measurements of a Zn0.5Cd0.5Se/Zn0.13Mg0.87Se single QW yielded multiple transitions from the QW, allowing us to estimate the conduction band offset of this heterostructure to be as high as 1.12 eV.

Published in:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:23 ,  Issue: 3 )

Date of Publication:

May 2005

Need Help?

IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.