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Optical characterization and evaluation of the conduction band offset for ZnCdSe/ZnMgSe quantum wells grown on InP(001) by molecular-beam epitaxy

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6 Author(s)
Sohel, Mohammad ; Department of Chemistry of The City College of New York and Graduate Center of CUNY, New York, New York 10031 ; Zhou, Xuecong ; Lu, Hong ; Perez-Paz, M.Noemi
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Lattice matched ZnMgSe grown on InP is of considerable interest for its potential applications as a cladding layer due to the high band-gap energy (∼3.6 eV) and for use in intersubband devices such as quantum cascade lasers. Several lattice matched Zn0.5Cd0.5Se/Zn0.13Mg0.87Se quantum wells (QWs) were grown on InP (001) substrates. Emission ranging from the near UV to the visible spectral range was achieved by varying the thickness of the wells. The QW fundamental transition as function of the QW thickness was experimentally studied and modeled using an envelope calculation. The contactless electroreflectance measurements of a Zn0.5Cd0.5Se/Zn0.13Mg0.87Se single QW yielded multiple transitions from the QW, allowing us to estimate the conduction band offset of this heterostructure to be as high as 1.12 eV.

Published in:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:23 ,  Issue: 3 )

Date of Publication:

May 2005

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