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Characterization of small-mismatch GaAsSbN on GaAs grown by solid source molecular beam epitaxy

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4 Author(s)
Wicaksono, S. ; School of Electrical and Electronic Engineering, Nanyang Technological University, Nanyang Avenue, Singapore 639798, Republic of Singapore ; Yoon, S.F. ; Tan, K.H. ; Loke, W.K.

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GaAsSbN layers with small lattice mismatch to GaAs were studied for possible application as the intrinsic layer in a GaAs-based p-i-n photodetector. Our calculation has shown that small lattice mismatch GaAsSbN to GaAs could be achieved at an Sb/N atomic ratio of 2.60. GaAsSbN was grown as the intrinsic layer for a GaAs/GaAsSbN/GaAs photodetector structure using solid-source molecular beam epitaxy in conjunction with a radio frequency (rf) plasma-assisted nitrogen source and valved antimony cracker source. The lattice mismatch of the GaAsSbN layer to GaAs was kept below 5000 ppm, which is sufficient to maintain coherent growth of ∼0.5 μm thick GaAsSbN on GaAs substrate. The growth temperature was varied between 420 and 520 °C, and the Sb flux beam equivalent pressure between 1.7×10-8 and 2.3×10-8 Torr to maintain coherent growth. All samples exhibit room temperature photocurrent response in the 1.3 μm wavelength region. X-ray diffraction two-dimensional maps showed diffuse scattering, which may have been caused by point defects in the material.

Published in:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:23 ,  Issue: 3 )