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Cross sections for the investigation of the electroluminescence excitation of InGaN/GaN quantum wells in blue light-emitting diodes with multiquantum barriers

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7 Author(s)
Nee, Tzer-En ; Department of Electronic Engineering, Chang Gung University, 259 Wen-Hwa 1st Road, Kwei-Shan, Tao-Yuan, Taiwan, Republic of China ; Wang, Jen-Cheng ; Lin, Chung-Han ; Lin, Ray-Ming
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Cross sections of the electroluminescence (EL) excitation of InGaN/GaN multiquantum wells (MQWs) in blue light-emitting diodes (LEDs) with multiquantum barriers (MQBs) have been investigated. It was found that a device with an MQB structure exhibited a higher quantum efficiency, as well as higher temperature insensitivity, compared with the conventional MQW LEDs. A total cross section of 5.3×10-15 cm2 was obtained for the MQB QWs, by fitting them to the measurement of the spectral intensity at room temperature; the value was 4.5×10-15 cm2 for those devices with GaN barriers. Not only the EL excitation cross section for active region, but also the abnormal quantum efficiency evolutions were found to be a function of temperature. Moreover, they were in good agreement with the rate equation model.

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Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:23 ,  Issue: 3 )