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Browse Journals & Magazines > Journal of Vacuum Science & T ...> Volume:23 Issue:3 Help

Effect of carrier hopping and relaxing on photoluminescence line shape in self-organized InAs quantum dot heterostructures

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3 Author(s)
Nee, Tzer-En ; Department of Electronic Engineering, Chang Gung University, 259 Wen-Hwa 1st Road, Kwei-Shan, Tao-Yuan, Taiwan, Republic of China. ; Ya-Fen Wu ; Lin, Ray-Ming

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1116/1.1924585 

A steady-state thermal model for carrier dynamics in self-organized InAs/GaAs quantum dot heterostructure is presented. The effect of quantum-dot size distribution, density of states random population, thermal emission, retrapping, and relaxation are investigated. The temperature-dependent photoluminescence spectra obtained from two samples with different dot densities and size uniformities are simulated in this model and show a good agreement with experiment. The corresponding mechanisms of carrier dynamics related to the thermal redistribution and lateral transition of excited carriers as well as the observed phenomena resulting from these mechanisms, are discussed in detail.

Published in:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:23 ,  Issue: 3 )

Date of Publication: May 2005

Page(s):
954 - 958
ISSN :
1071-1023
Digital Object Identifier :
10.1116/1.1924585
Product Type:
Journals & Magazines
Date of Current Version :
18 June 2009
Issue Date :
May 2005

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