Cart (Loading....) | Create Account
Close category search window

Copper diffusion barrier properties of CVD boron carbo-nitride

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Engbrecht, E.R. ; Department of Chemical Engineering, University of Texas, Austin, Texas 78712 ; Sun, Y.-M. ; Junker, K.H. ; White, J.M.
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link: 

The copper diffusion barrier properties of amorphous boron carbo-nitride (BCxNy) films were studied. The BCxNy films were deposited by chemical vapor deposition at 360 °C and 1 Torr using dimethylamine borane with no reaction gas (BC0.37N0.15), with NH3(BC0.19N0.44), or with C2H4(BC0.90N0.08); their dielectric constants were 4.1, 4.4, and 3.9, respectively. A SiC0.76N0.44 film was used to benchmark the study. Barrier films were deposited on 7 nm thermal oxide/n-type Si substrates. The leakage current for BC0.90N0.08, 1.1×10-8 A/cm2 at 0.5 MV/cm, is the lowest of the three but it is larger than that of the benchmark SiC0.76N0.44 film, 5.5×10-9 A/cm2. Time dependent dielectric breakdown is used to test barrier time-to-failure of Cu-gate capacitors at 150 °C and +2 to 5 MV/cm. BC0.90N0.80 displayed barrier performance comparable to SiC0.76N0.44 and was noticeably better than BC0.37N0.15 and BC0.19N0.44. Overall, BCxNy barriers are promising and are improved with lower boron content, fewer B–B bonds, and increased B–C bonds.

Published in:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:23 ,  Issue: 2 )

Date of Publication:

Mar 2005

Need Help?

IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.