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Electron-beam patterning with sub-2 nm line edge roughness

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6 Author(s)
Malac, Marek ; National Institute for Nanotechnology, 9107 116 Street, Edmonton T6G 2V4, Canada ; Egerton, Ray ; Freeman, Mark ; Lau, June
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Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1116/1.1856466 

Negative tone patterns were created by polymer-contamination writing in a transmission electron microscope. Typical line edge roughness of the polymer lines was found to be below 1 nm. The patterns were transferred to bismuth films using an anisotropic ion etch, resulting in final bismuth line edge roughness less than 2 nm. This low roughness was achieved by growing the bismuth film such that the same crystallographic planes were exposed to the etching flux of ions.

Published in:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:23 ,  Issue: 1 )