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Annealing temperature stability of Ir and Ni-based Ohmic contacts on AlGaN/GaN high electron mobility transistors

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15 Author(s)
Kang, B.S. ; Department of Chemical Engineering, University of Florida, Gainesville, Florida 32611 ; Kim, W.K. ; La Roche, J.R. ; Ren, F.
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Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1116/1.1814111 

Ti/Al/Ir/Au Ohmic contacts on AlGaN/GaN high electron mobility transistors (HEMTs) show promising electrical performance, with lower specific contact resistance than obtained with the more conventional Ti/Al/Ni/Au metallization. HEMTs with both types of metallization have been measured up to 550 °C. We find that the dc performance of devices with Ir-based contacts is significantly better at each temperature up to this maximum value, with higher transconductance (gm), saturated drain-source current (IDSS), and more stable threshold voltage (Vth). These contacts look very promising for HEMT power amplifier applications involving high temperature operation.

Published in:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:22 ,  Issue: 6 )

Date of Publication:

Nov 2004

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