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High performances of InGaP/InGaAs/GaAs pseudomorphic modulation-doped field effect transistors using camel-gate structure

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4 Author(s)
Jung-Hui Tsai ; Department of Physics, National Kaohsiung Normal University, 116, Ho-ping 1st Road, Kaohsiung, Taiwan, Republic of China ; King-Poul Zhu ; Shao-Yen Chiu ; Ying-Cheng Chu

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1116/1.1783318 

In this article, high-performance InGaP/InGaAs/GaAs δ-doped pseudomorphic modulation-doped field effect transistors (pMODFETs) employing n+-GaAs/p+-InGaP/n-InGaP camel-gate structure are characterized. Because of the depleted p-n junction in the gate region and the presence of the large conduction-band discontinuity of the InGaP/InGaAs heterostructure, a large gate turn-on voltage is obtained. The dc and microwave characteristics of single- and double-δ-doped pMODFETs are demonstrated. The double-δ-doped pMODFET exhibits a higher drain saturation current, a larger transconductance, a broader gate voltage swing, and better high-frequency responses than the single-δ-doped device. The excellent performance of the studied devices is promising for linear and large signal amplifiers and high-frequency circuit applications.

Published in:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:22 ,  Issue: 5 )

Date of Publication:

Sep 2004

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