In this article, high-performance InGaP/InGaAs/GaAs δ-doped pseudomorphic modulation-doped field effect transistors (pMODFETs) employing n+-GaAs/p+-InGaP/n-InGaP camel-gate structure are characterized. Because of the depleted p-n junction in the gate region and the presence of the large conduction-band discontinuity of the InGaP/InGaAs heterostructure, a large gate turn-on voltage is obtained. The dc and microwave characteristics of single- and double-δ-doped pMODFETs are demonstrated. The double-δ-doped pMODFET exhibits a higher drain saturation current, a larger transconductance, a broader gate voltage swing, and better high-frequency responses than the single-δ-doped device. The excellent performance of the studied devices is promising for linear and large signal amplifiers and high-frequency circuit applications.