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Interface-blocking mechanism for reduction of threading dislocations in SiGe and Ge epitaxial layers on Si(100) substrates

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5 Author(s)
Yang, T.H. ; Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu, Taiwan 30050, Republic of China ; Luo, G.L. ; Chang, E.Y. ; Hsieh, Y.C.
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A mechanism of interface blocking was proposed to reduce the threading dislocations in the SiGe and Ge layers on Si(100) substrates. In this work, epitaxial Si1-xGex/Si1-(x-y)Gex-y and Ge/SiyGe1-y layers were grown by UHV/CVD. It was surprisingly found that if the variation of the Ge composition, y, across the interface of Si1-xGex/Si1-(x-y)Gex-y or Ge/SiyGe1-y is higher than a certain value, most of the threading dislocations appear to be blocked and confined in the underlying Si1-(x-y)Gex-y or SiyGe1-y layer by the interface. It implies that this finding can provide a simple way to grow high-quality relaxed SiGe and Ge layers on the Si substrates.

Published in:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:22 ,  Issue: 5 )