By Topic

Power loss measurements in quasi-1D and quasi-2D systems in an In0.52Al0.48As/In0.53Ga0.47As/In0.52Al0.48As heterostructure

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Prasad, C. ; Department of Electrical Engineering and Center for Solid State Electronics Research, Arizona State University, Tempe, Arizona 85287-5706 ; Ferry, D.K. ; Wieder, H.H.

Your organization might have access to this article on the publisher's site. To check, click on this link: 

We have carried out Joule heating measurements on three etched quantum wires (QWRs) of various widths and 2D electron gases (2DEGs) over temperatures ranging from 0.035 K to 20 K. The devices are fabricated in an InAlAs/InGaAs/InAlAs heterostructure with a 25 nm wide In0.53Ga0.47As quantum well region, grown on a lattice matched InP substrate. Comparison of the Shubnikov–de Haas oscillations (SdHO) in the wires and 2DEGs and the phase-breaking time (from conductance fluctuations) in the narrowest wire are used to extract the temperature dependence of the power loss per electron. © 2004 American Vacuum Society.

Published in:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:22 ,  Issue: 4 )