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Power loss measurements in quasi-1D and quasi-2D systems in an In0.52Al0.48As/In0.53Ga0.47As/In0.52Al0.48As heterostructure

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3 Author(s)
Prasad, C. ; Department of Electrical Engineering and Center for Solid State Electronics Research, Arizona State University, Tempe, Arizona 85287-5706 ; Ferry, D.K. ; Wieder, H.H.

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We have carried out Joule heating measurements on three etched quantum wires (QWRs) of various widths and 2D electron gases (2DEGs) over temperatures ranging from 0.035 K to 20 K. The devices are fabricated in an InAlAs/InGaAs/InAlAs heterostructure with a 25 nm wide In0.53Ga0.47As quantum well region, grown on a lattice matched InP substrate. Comparison of the Shubnikov–de Haas oscillations (SdHO) in the wires and 2DEGs and the phase-breaking time (from conductance fluctuations) in the narrowest wire are used to extract the temperature dependence of the power loss per electron. © 2004 American Vacuum Society.

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Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:22 ,  Issue: 4 )