By Topic

Studies of oxide desorption from GaAs substrates via Ga2O3 to Ga2O conversion by exposure to Ga flux

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Wasilewski, Z.R. ; Institute for Microstructural Sciences, National Research Council Canada, Ottawa, Ontario K1A 0R6, Canada ; Baribeau, J.‐M. ; Beaulieu, M. ; Wu, X.
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link: 

Removal of the native oxide from GaAs wafers in the process of thermal desorption in the presence of As flux causes very significant surface degradation. We examine the merits of an alternative oxide desorption method that consists in a standard thermal oxide removal procedure preceded by a partial oxide removal at lower temperatures via conversion of the stable Ga2O3 surface oxide into a volatile Ga2O oxide by a pulsed supply of Ga in the absence of As flux. We find that a reduction of the substrate roughness by more than one order of magnitude is obtained on most epi-ready GaAs substrates regardless of their age, even if only 70% of the original gallium oxide is removed with Ga pulses, and that nearly atomically smooth surfaces are obtained with 90% oxide removal. In addition, we demonstrate that the Ga-induced oxide removal process is laterally inhomogeneous, making this method vulnerable to the accumulation of Ga droplets on the GaAs surface when more than about 90% of the surface oxide is removed. The Ga2O desorption pattern monitored with quadrupole mass spectrometry indicates that other nonvolatile species initially present on the top of the gallium oxide are also converted to a volatile species by Ga exposure before large areas of Ga2O3 become exposed. We examine the residual surface contamination left at the substrate–epilayer interface and find no significant influence of the age of the substrate, or the oxide removal method, on the measured levels of silicon, oxygen, and carbon. © 2004 American Vacuum Society.

Published in:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:22 ,  Issue: 3 )