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Molecular beam epitaxial growth of AlGaPSb and AlGaPSb/InP distributed Bragg reflectors on InP

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4 Author(s)
Klem, J.F. ; Sandia National Laboratories, Albuquerque, New Mexico 87185-0603 ; Serkland, D.K. ; Kim, J. ; Wang, T.-Y.

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1116/1.1669600 

The molecular beam epitaxial growth of GaPSb and Ga-rich AlGaPSb nearly lattice matched to InP has been investigated. The effect of growth temperature, P flux, Ga flux, and Sb flux on the alloy P/Sb ratio was examined. The 300 K band gap of lattice-matched GaPSb was estimated to be 0.84 eV based on photoluminescence measurements, and the shift of band gap energy with Al content in AlGaPSb alloys with Al fractions of 0.03–0.04 was investigated. A conduction band offset of approximately 0.15 eV in a type-II configuration was estimated between lattice-matched Al0.04Ga0.96P0.35Sb0.65 and InP based on photoluminescence characterization of multiple quantum well structures. AlGaPSb/InP distributed Bragg reflectors (DBRs) with a stopband centered on 1550 nm were grown with excellent lattice matching and good surface morphology. A refractive index difference of 0.41 between these materials was estimated based on a fit to the DBR reflectance spectrum. © 2004 American Vacuum Society.

Published in:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:22 ,  Issue: 3 )

Date of Publication:

May 2004

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