Cart (Loading....) | Create Account
Close category search window

Design of a complementary-metal-oxide-semiconductor-compatible field-emission magnetic sensor with adjustable sensitivity

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Garner, D.M. ; Department of Electronic and Electrical Engineering, University College London, Torrington Place, London WC1E 7JE, United Kingdom ; French, P.J. ; Hui, G. ; Fung, A.

Your organization might have access to this article on the publisher's site. To check, click on this link: 

We report on the development of a practical realization of a vacuum magnetic sensor device. The proposed device differs from those proposed in previous work [M. I. Marques, P. A. Sarena, D. Nicolaescu, and A. Correia, Solid-State Electron. 45, 977 (2001); K. Uemura, S. Kanemaru, and J. Itoh, J. Micromech. Microeng. 11, 81 (2001)] in that it is lateral, with the cathode, gate, and anode electrodes all lying in a plane parallel to that of the silicon substrate. By using the ion trajectory modeling program SIMION, we show that this structure allows the sensor device to have a variable sensitivity mode of operation, in which the sensitivity can be controlled through application of a voltage to the device substrate. This device allows a magnetic sensing system to be created that can measure magnetic field strengths over many orders of magnitude. © 2004 American Vacuum Society.

Published in:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:22 ,  Issue: 3 )

Date of Publication:

May 2004

Need Help?

IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.