By Topic

Influence of N2O plasma treatment on microstructure and thermal stability of WNx barriers for Cu interconnection

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Tsai, Kou-Chiang ; Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu 300, Taiwan, Republic of China ; Wen-Fa Wu ; Chen, Jen-Chung ; Pan, Te-Jen
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1116/1.1715087 

Thermal stabilities of Cu-contacted n+–p junctions with tungsten nitride (WNx) diffusion barriers deposited at various nitrogen flow ratios are investigated. N2O plasma treatment is applied to improve thermal stability and barrier performance of WNx film. Sheet resistance of Cu/N2O plasma-treated WNx/Si is fairly stable even after annealing at 750 °C for 30 min. Moreover, N2O plasma treatment enables the Cu/WNx/n+–p junction diodes to sustain thermal annealing at 600 °C without electrical degradation. Auger electron spectroscopy depth profiles show that Cu diffusion through the N2O plasma-treated WNx barrier is extremely limited, even after annealing at 675 °C. Analyses of transmission electron microscopy and x-ray photoemission spectroscopy show that nitridation and oxidation on the WNx barrier occur and an amorphous layer is formed after N2O plasma treatment. © 2004 American Vacuum Society.

Published in:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:22 ,  Issue: 3 )