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Enhancement-mode In0.52Al0.48As/In0.6Ga0.4As tunneling real space transfer high electron mobility transistor

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6 Author(s)
Chen, Yen-Wei ; Department of Electrical Engineering, Institute of Microelectronics, National Cheng-Kung University, 1 University Road, Tainan, Taiwan 70101, Republic of China ; Chen, Yeong-Jia ; Wei-Chou Hsu ; Hsu, Rong-Tay
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An enhancement-mode In0.52Al0.48As/In0.6Ga0.4As tunneling real-space transfer high electron mobility transistor (HEMT) was fabricated. The studied device operates as a conventional enhancement-mode HEMT under a low gate electrode bias. As the gate electrode bias increases, the electric field applied between the gate electrode and the InGaAs channel increases and the electrons in the channel become “hot.” If the transverse field is sufficiently large, then the electrons in the InGaAs channel layer may have enough energy to overcome the barrier and tunnel into the gate electrode, thus IDS decreases as IG increases. Therefore, pronounced N-shaped negative differential resistance phenomenon and negative transconductance are observed in the studied device. © 2004 American Vacuum Society.

Published in:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:22 ,  Issue: 3 )

Date of Publication:

May 2004

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