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Growth and characterization of compressive-strain GaInAsP/InP multiple-quantum-well laser diodes with the tensile-strain GaInP quantum barrier

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7 Author(s)
Wu, Ming-Yuan ; Research Institute of Electronics Engineering, National Tsing Hua University, Hsinchu 300, Taiwan, Republic of China ; Lei, Po-Hsun ; Tsai, Chia-Lung ; Yang, Chi-Da
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In this article, we report on the growth of 1.3-μm-compressive-strain GaInAsP/InP multiple-quantum-well laser diodes (CS-MQW LDs) with a tensile-strain GaInP quantum barrier (GaInP-QB) in the separate-confinement-heterostructure (SCH) regions. Observed via the photoluminescence (PL) spectra, the optimum Ga composition of GaxIn1-xP-QB, GaInP-QB thickness, and pair number of the GaxIn1-xP-QB are 0.09, 5 nm thick and one pair, respectively. The optimum GaInP-QB structure in the p-side SCH region exhibits the narrowest PL full width at half maximum of 43.1 meV, the lowest threshold current of 23 mA, and the highest characteristic temperature of 52 K for the as-cleaved LDs with a 600-μm-cavity length and a 3.5-μm-wide ridge stripe. This low threshold current is better than that of the LDs with GaInP-QB in the n-side SCH region and that of the conventional LDs without GaInP-QB. © 2004 American Vacuum Society.

Published in:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:22 ,  Issue: 3 )

Date of Publication:

May 2004

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