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Size and site controlled Ga nanodots on GaAs seeded by focused ion beams

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3 Author(s)
Lugstein, A. ; Vienna University of Technology, Floragasse 7, 1040 Vienna, Austria ; Basnar, B. ; Bertagnolli, E.

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We present an approach for the generation of uniform metallic nanodots which, in contrast to conventional bottom up or top down processes, is based on a subtractive self-organization process relying on material decomposition induced by focused ion beam exposure. Nearly pure gallium dots were fabricated on GaAs (100) using a 50 keV Ga focused ion beam at normal incidence and a subsequent rapid thermal annealing. A dose of 2.5×1016ions/cm2 can be considered as a threshold dose for the development of dots on GaAs (100). The diameters of these dots range from 120 to 850 nm with an aspect ratio of about 0.4 and a dot density of up to 7.23×107/cm2. Two-dimensional ordered arrays of embedded as well as freestanding Ga dots were fabricated by a site control technique relying on pre-patterned holes and an irradiation mediated migration and agglomeration. © 2004 American Vacuum Society.

Published in:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:22 ,  Issue: 3 )