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High conversion efficiency mass-limited Sn-based laser plasma source for extreme ultraviolet lithography

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5 Author(s)
Richardson, M. ; Laser Plasma Lab, School of Optics: CREOL&FPCE, University of Central Florida, Orlando, Florida 32817 ; Koay, C.-S. ; Takenoshita, K. ; Keyser, C.
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Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1116/1.1667511 

Extreme ultraviolet lithography requires a high-efficiency light source at 13 nm that is free from debris. Our mass-limited Sn-based laser plasma source shows 1.2% conversion efficiency. Emission spectra from the source were obtained to observe the effects of Sn concentration and effects of laser intensity. Debris measurements were analyzed, and an enhanced repeller field configuration shows marked improvement in mitigating debris. © 2004 American Vacuum Society.

Published in:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:22 ,  Issue: 2 )

Date of Publication:

Mar 2004

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