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Carrier profiling via scanning tunneling spectroscopy: Comparison with scanning capacitance microscopy

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7 Author(s)
Liu, F.Y. ; Center for Integrated Systems, Department of Electrical Engineering, Stanford University, Stanford, California 94305 ; Griffin, P.B. ; Plummer, J.D. ; Lyding, J.W.
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Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1116/1.1643054 

Tunneling measurements were taken on a hydrogen terminated, 2×1 reconstructed, Si(100) surface, formed by an in situ passivation technique. I–V characteristics on this surface are shown to be sensitive to the electronic structure at atomic length scales. Tunneling measurements across a pn junction clearly delineate a transition of width in close agreement with that predicted by process and device simulators. In contrast, a scanning capacitance microscopy profile on the same sample exhibits a significantly larger transition width. © 2004 American Vacuum Society.

Published in:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:22 ,  Issue: 1 )

Date of Publication:

Jan 2004

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