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SiC/Si-dots multilayer structures formed by supersonic free jets of CH3SiH3 and Si3H8

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4 Author(s)
Ikoma, Yoshifumi ; Department of Materials Science and Engineering, Kyushu University, 6-10-1 Hakozaki, Fukuoka 812-8581, Japan ; Ohtani, Ryota ; Matsui, Nobuaki ; Motooka, Teruaki

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We have investigated the formation of multilayer structures of SiC/Si-dots on Si(100) by supersonic free jet chemical vapor deposition. CH3SiH3 and Si3H8 jets were used for SiC and Si-dots, respectively. The first epitaxial SiC layer with a thickness of ∼15 nm and polycrystalline Si-dots with a size of ∼100 nm were grown by the first CH3SiH3 and following Si3H8 jet exposures. When the CH3SiH3 and Si3H8 jets were directed onto the Si-dot surface, thin (∼5 nm) SiC layers and ∼50 nm Si-dots were grown and formed Si-dots/SiC/Si-dots/SiC/Si(100). By repeating these SiC and Si-dots growths, polycrystalline SiC/Si-dots multilayer was formed on Si(100). © 2003 American Vacuum Society.

Published in:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:21 ,  Issue: 6 )

Date of Publication:

Nov 2003

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