By Topic

Si adatom diffusion on Si (100) surface in selective epitaxial growth of Si

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

The purchase and pricing options are temporarily unavailable. Please try again later.
5 Author(s)
Seung-Hyun Lim ; School of Materials Science and Engineering, and Interuniversity Semiconductor Research Center (ISRC), Seoul National University, Seoul 151-742, Korea ; Song, Sukchan ; Park, Tai-Su ; Yoon, Euijoon
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link: 

The growth temperature dependence of Si adatom diffusion on Si (100) surface was systematically investigated in a cold wall ultrahigh vacuum chemical vapor deposition system. Si epitaxial layers were selectively grown on local oxidation of silicon patterned Si substrates. By cross-sectional transmission electron microscopy analysis, the increase in Si growth rate on the Si (100) surface near the edge of (311) facet was observed at various growth temperatures. This can be understood as a consequence of the mass transport from the sidewall (311) facet to the top (100) surface. Based on a simple diffusion model, the surface diffusion lengths of Si adatoms along the [110] direction were estimated to be about 70, 140, and 200 nm at 550, 600, and 650 °C, respectively. The calculated activation energy of 1.4 eV for diffusion of Si adatoms from the temperature dependence of the diffusion length was relatively higher than those in previous reports obtained under ultrahigh vacuum environment. This difference was discussed in terms of the discrepancy in the surface states by hydrogen adsorption on the Si surface. © 2003 American Vacuum Society.

Published in:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:21 ,  Issue: 6 )