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Magnesium oxide gate dielectrics grown on GaN using an electron cyclotron resonance plasma

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7 Author(s)
Gila, B.P. ; Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611 ; Onstine, A.H. ; Kim, J. ; Allums, K.K.
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Magnesium oxide was grown by gas source molecular beam epitaxy on (0001) oriented metalorganic chemical vapor deposition n-GaN using elemental Mg and atomic oxygen supplied from an electron cyclotron resonance plasma source. X-ray diffraction (XRD) indicated that the oxide was single crystal for TSUB=350 °C and mostly polycrystalline for TSUB=100 °C. Reflection high energy electron diffraction suggests that the films deposited at the lower temperature begin with a single crystal nucleation layer then quickly become polycrystalline. For both growth temperatures, the magnesium oxide was highly textured toward the (111) direction, with the polycrystalline samples showing a broader XRD peak but smoother surfaces. Single crystal MgO grown at 350 °C had high current leakage, prohibiting electrical measurements. A breakdown field of 2.3 MV/cm and an interface state density of 4×1011cm-2eV-1 were measured for the polycrystalline (TSUB=100 °C) magnesium oxide/GaN heterostructure. © 2003 American Vacuum Society.

Published in:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:21 ,  Issue: 6 )

Date of Publication:

Nov 2003

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