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High aspect ratio nano-oxidation of silicon with noncontact atomic force microscopy

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6 Author(s)
Clement, N. ; GPEC, Faculté des Sciences de Luminy, F-13288 Marseille Cedex 9, France ; Tonneau, D. ; Gely, B. ; Dallaporta, H.
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We report the formation of high aspect ratio ∼0.3 (height/width) oxide features with noncontact mode atomic force microscopy assisted lithography. The process requires high humidity levels, series of short pulses ≪100 ns, high voltage level ≫25 V, a tip oscillation amplitude ∼20 nm, and feedback “on.” We also show that the application of a voltage at magnitude higher than a certain limit damages the surface. © 2003 American Vacuum Society.

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Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:21 ,  Issue: 6 )