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Demonstrations of electronic pattern switching and 10× pattern demagnification in a maskless microion-beam reduction lithography system

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6 Author(s)
Ngo, V.V. ; Lawrence Berkeley National Laboratory, 1 Cyclotron Road, MS 5-121, Berkeley, California 94720 ; Akker, B. ; Leung, K.N. ; Noh, Isaac
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A proof-of-principle ion projection lithography (IPL) system called maskless microion-beam reduction lithography (MMRL) has been developed and tested at the Lawrence Berkeley National Laboratory for future integrated circuits manufacturing and thin-film media patterning [V. V. Ngo etal, J. Vac. Sci. Technol. B 17, 6 (1999)]. This MMRL system is aimed at completely eliminating the first stage of the conventional IPL system [G. Stengl etal, J. Vac. Sci. Technol. B 10, 2824 (1992)] that contains the complicated beam optics design in front of the stencil mask and the mask itself. It consists of a multicusp rf plasma generator, a multibeamlet pattern generator, and an all-electrostatic ion optical column. Results from ion beam exposures on poly(methymethacrylate) and Shipley UVII-HS resists using 75 keV H+ are presented in this article. Proof-of-principle electronic pattern switching together with 10× reduction ion optics (using a pattern generator made of nine 50 μm switchable apertures) has been performed and is reported in this article. In addition, the fabrication of a microfabricated pattern generator [K. L. Scott etal, J. Vac. Sci. Technol. B 18, 6 (2000)] on a silicon on insulator membrane is also presented. © 2003 American Vacuum Society.

Published in:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:21 ,  Issue: 6 )

Date of Publication:

Nov 2003

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