Cart (Loading....) | Create Account
Close category search window
 

Reduction of silicon recess caused by plasma oxidation during high-density plasma polysilicon gate etching

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Vitale, S.A. ; Texas Instruments, P.O. Box 650311, Mail Stop 3736, Dallas, Texas 75265 ; Smith, B.A.

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1116/1.1609474 

Silicon loss during gate etch from the active region of a traditional complementary metal–oxide–semiconductor transistor is shown to take place through plasma oxidation of the silicon substrate during the overetch step. The plasma oxidation occurs by an ion-enhanced process with an activation energy of only 0.02 eV. This phenomenon is successfully modeled using the traditional Deal–Grove thermal oxidation model, with the inclusion of a depth-dependent reaction rate constant to incorporate the ion-enhancement effect. Plasma oxidation and silicon loss are reduced by using a shorter polysilicon over-etch time, lower source and bias power, lower substrate temperature, and lower O2 flow. A viable polysilicon over-etch process was developed that produced vertical gate profiles while reducing the silicon loss by 32%. © 2003 American Vacuum Society.

Published in:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:21 ,  Issue: 5 )

Date of Publication:

Sep 2003

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.