Cart (Loading....) | Create Account
Close category search window
 

Deep dry etching of borosilicate glass using fluorine-based high-density plasmas for microelectromechanical system fabrication

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Ichiki, Takanori ; Department of Electric and Electronics Engineering, Toyo University, 2100 Kujirai, Kawagoe, Saitama  350-8585, JapanPRESTO, Japan Science and Technology Agency, Kawaguchi Center Building, 1-8, Honcho 4-chome, Kawaguchi City 332-0012, Japan ; Sugiyama, Yoshinari ; Ujiie, Takekazu ; Horiike, Yasuhiro

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1116/1.1612935 

For the fabrication of microelectromechanical system devices, deep trench etching of borosilicate glass (Corning 7740) has been investigated using SF6/Ar inductively coupled plasma. Since borosilicate glass contains metal elements which produce nonvolatile fluorides, dry etching of its smooth surface is a difficult issue. In this article, requisite conditions for etching glass with a smooth surface and high mask selectivity have been discussed on the basis of the results of a comprehensive experimental study of the effects of substrate bias power and Ar addition on the removal of involatile fluoride residues deposited via the backscattering of etch products in the vicinity of the substrate surface. Under optimized etching conditions, deep trench etching of borosilicate glass to 32 μm depth and 15 μm width has been accomplished using 3-μm-thick chrome metal masks. © 2003 American Vacuum Society.

Published in:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:21 ,  Issue: 5 )

Date of Publication:

Sep 2003

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.