By Topic

Highly selective reactive-ion etching using CO/NH3/Xe gases for microstructuring of Au, Pt, Cu, and 20% Fe–Ni

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Abe, Takashi ; Graduate School of Engineering, Tohoku University, 01 Aza Aoba, Aramaki Aoba-ku Sendai 980-8579, JapanPRESTO, JST ; Hong, Youn Gi ; Esashi, M.

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1116/1.1612516 

A highly selective dry-etch process for conductive metals (Au, Pt, and Cu) and magnetic metal (20% Fe-Ni) has been developed using a magnetron reactive-ion-etching system employing a CO/NH3/Xe chemistry. Etch selectivities of these metals to titanium are greater than 80:1 for Au, 40:1 for Pt, 30:1 for Cu, and 15:1 for permalloy (20% Fe–Ni) at the titanium-etch rate of 1.0 nm/min. The etching was conducted at room temperature. It was observed that the small addition of Xe to CO/NH3 etch gases (molar ratio=1/7) increased the etch rate of these metals while promoting nitridation of the titanium mask and achieving enhanced selectivity. The titanium can be used both as a mask for the sputter etching of noble metals and as a mask for the reactive-ion etching of magnetic metals in the plasma. By about a factor of 3, the inclusion of Xe enhanced the etch selectivities for noble metals, copper, and a magnetic metal over titanium. © 2003 American Vacuum Society.

Published in:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:21 ,  Issue: 5 )