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Electrostatic potential for a hyperbolic probe tip near a semiconductor

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1 Author(s)
Feenstra, R.M. ; Department of Physics, Carnegie Mellon University, Pittsburgh, Pennsylvania 15213

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1116/1.1606466 

The electrostatic potential resulting from a metallic probe tip near a semiconductor is examined. A solution is formulated assuming circular symmetry and using prolate spheroidal coordinates in the vacuum and Cartesian coordinates in the semiconductor. The result is most directly applied to the case of a hyperbolic probe tip, but other shapes (for example, a small hemispherical protrusion on the tip apex) can also be handled. Numerical results are given for representative cases that might be encountered in scanning probe microscopy. © 2003 American Vacuum Society.

Published in:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:21 ,  Issue: 5 )