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Structural and magnetic properties of (Ga,Mn)N layers grown on SiC by reactive molecular beam epitaxy

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3 Author(s)
Ploog, K.H. ; Paul Drude Institute for Solid State Electronics, Hausvogteiplatz 5-7, D-10117 Berlin, Germany ; Dhar, S. ; Trampert, A.

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Incorporation of Mn into hexagonal GaN does not lead to ferromagnetic semiconductors, as predicted, but to insulating spin glass materials. Structural characterization by high-resolution transmission electron microscopy reveals that samples with Mn content below 10% are uniform ternary alloys, while in samples with higher Mn content we find Mn-rich clusters which are embedded in the (Ga,Mn)N alloy matrix. At low temperature (≪10 K) the magnetic behavior of the samples is similar showing antiferromagnetic characteristics with a spin-glass transition. However, the samples with higher Mn content additionally exhibit ferromagnetic properties even far above room temperature. This ferromagnetism originates from Mn-rich clusters in the ternary alloy. © 2003 American Vacuum Society.

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Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:21 ,  Issue: 4 )