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Low resistance Ohmic contacts to n-GaN by Ar plasma and forming gas ambient treatments

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5 Author(s)
Lee, C.C. ; Department of Electronics Engineering, National Chiao Tung University, Hsinchu, Taiwan, Republic of China ; Lee, C.P. ; Yeh, M.H. ; Lee, W.I.
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Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1116/1.1596217 

In this article, a scheme for fabricating low resistance Ohmic contacts to n-GaN was developed. This approach takes advantage of Ar plasma treatment and thermal annealing in forming gas ambient. As a result, the adjustment of Ar flow rate was very effective in improving the contact resistance. After proper Ar plasma treatment, the contact resistance and specific contact resistance of as-deposited Ohmic contacts were reduced to 0.362 Ω mm and 3.9×10-5 Ω cm2, respectively. Low contact resistance (0.103 Ω mm) and specific contact resistance (3.2×10-6 Ω cm2) were obtained after annealing in N2 gas ambient. By performing thermal annealing in forming gas ambient, even lower contact resistance (0.093 Ω mm) and specific contact resistance (2.6×10-6 Ω cm2) were successfully achieved, indicating that the electrical characteristics of Ohmic contacts would not be affected by the effect of hydrogen passivation of dopants in n-GaN. © 2003 American Vacuum Society.

Published in:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:21 ,  Issue: 4 )

Date of Publication:

Jul 2003

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