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Rectifying characteristics of sputter-deposited SiGe diodes

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7 Author(s)
Guo-Ping Ru ; Department of Microelectronics, ASIC & System State Key Laboratory, Fudan University, Shanghai 200433, China ; Wang, Guang-Wei ; Yu-Long Jiang ; Wei Huang
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Schottky and pn junction diodes with good rectifying characteristics have been prepared based on the polycrystalline SiGe (poly-SiGe) thin film deposited by the ion-beam-sputtering (IBS) technique. Boron and phosphorus diffusion techniques have been used to dope and crystallize as-deposited amorphous SiGe film. Rectification ratios as high as 4000 and 1800 have been achieved in Pt/n-poly-SiGe and Ti/p-poly-SiGe Schottky diodes, respectively, while rectification ratio higher than 1500 and breakdown voltage higher than 200 V have been achieved in poly-SiGe pn junction diodes. Schottky barrier height has been determined to be 0.62 and 0.59 eV for Pt/n-poly-Si0.81Ge0.19 and Ti/p-poly-Si0.81Ge0.19 contacts, respectively, which indicates that the band alignment of poly-SiGe may be substantially different from that of epitaxial SiGe. © 2003 American Vacuum Society.

Published in:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:21 ,  Issue: 4 )

Date of Publication:

Jul 2003

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