Cart (Loading....) | Create Account
Close category search window

Inductively coupled plasma reactive ion etching of ZnO using BCl3-based plasmas

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

6 Author(s)
Kim, Han-Ki ; Micro and Nanotechnology Laboratory and Department of Electrical and Computer Engineering, University of Illinois, Urbana, Illinois 61801Department of Materials Science and Engineering, Kwangju Institute of Science and Technology (K-JIST), Kwangju 500-712, Korea ; Bae, J.W. ; Kim, T.-K. ; Kim, K.-K.
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link: 

Etching characteristics of ZnO are investigated by means of inductively coupled plasma (ICP) reactive ion etching in BCl3-based plasmas. Etch rates are studied as a function of BCl3/Cl2/Ar chemistries, substrate temperature, ICP coil power, rf power, and working pressure. Surface profilometer, scanning electron microscopy, and atomic force microscopy are used to characterize etch rates, etch profiles, and the surface morphologies of etched samples. It is shown that the etch rate is determined by the BCl3 content in the plasma. Auger electron spectroscopy results demonstrate that the BCl3-based etching process produces negligible changes in the surface stoichiometry of ZnO. © 2003 American Vacuum Society.

Published in:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:21 ,  Issue: 4 )

Date of Publication:

Jul 2003

Need Help?

IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.