Study of titanium silicide formation using spike anneal for integrated chip manufacturing

The use of spike anneal in titanium salicide process was studied. The area dependence of C49-to-C54 TiSi₂ phase transformation was reduced for deep submicron poly-Si gate by having spike anneal during [rapid thermal annealing (RTA)] RTA1 without the use of preamorphizing implant or implant through metal. It is believed that the spike anneal during RTA1 resulted in varying amounts of C54–TiSi₂, which then acts as nuclesus that grows during RTA2. Results showed that the spike anneal in RTA1 did not increase the gate to source/drain leakage current for the spike anneal temperature investigated at less than 900 °C. Results, also, show that a one-step RTA Salicide process is possible for larger linewidth devices using spike anneal. © 2003 American Vacuum Society.